| WARF: P05260US |  |
| High-power-gain, Bipolar Transistor Amplifier |
| INVENTORS | • | Zhenqiang Ma, Ningyue Jiang |
OVERVIEW
Silicon is a relatively inexpensive material for making integrated power
amplifiers for communications devices such as cell phones; however, these power
amplifiers are generally limited to low power at high frequencies. This
invention provides a silicon-based bipolar transistor and an associated
configuration that allow for maximum power performance at high frequencies.
The transistor can be either a silicon bipolar junction transistor or a
silicon-germanium heterojunction bipolar transistor. The invention uses a
common-base amplifier design rather than a common-emitter design with easy and
effective ballast-resistor-free control of current hogging to provide maximum
power gain and efficiency at radio frequencies, including microwave frequencies.
KEY BENEFITS
- Provides improved power gain and efficiency at high frequencies
- Useful in wireless power transmissions, particularly in automotive collision avoidance, WLAN point-to-point security communications, and cell phone applications
- Can be used with a variety of silicon transistor types
- Eliminates need for ballast resistors to improve power gain
- Exhibits significantly reduced sensitivity to heating
- Effectively uses the high breakdown voltage of a common-base transistor for improved mismatch ruggedness
- Maximizes the advantages of BiCMOS integration and make BiCMOS more competitive than III-V technologies
ADDITIONAL INFORMATION
Intellectual Property Status
Patent applied for.
Tech Fields
Electrical Engineering - Telecommunications
CONTACT INFORMATION
For current licensing status, please contact our team at
licensing@warf.org
or phone 608.262.4924. (Clicking this link will open a contact form in a popup window. If you have problems viewing the form, try disabling your popup blocker software.)
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