Wisconsin Alumni Research Foundation
A Leader in University Technology Transfer since 1925
Home | Printer Friendly
Technologies
New Inventions
New Patents
Agriculture (144)
Analytical Instrumentation (129)
Cleantech (89)
Diagnostic Assays (61)
Drug Discovery (164)
Education & Training (9)
Engineering (12)
Engines & Power Electronics (54)
Food & Supplements (56)
Information Technology (120)
Computing methods
Hardware
Image processing
Network technologies
Software
Telecommunications
Materials & Chemicals (94)
Medical Devices (76)
Medical Imaging (125)
Micro & Nanotech (69)
Miscellaneous (2)
Pharmaceuticals & Vitamin D (209)
Plasma Processing (25)
Pluripotent Cells (23)
Radiation Therapy (38)
Research Tools (287)
Semiconductors & Integrated Circuits (55)
Veterinary (20)
WARF: P02243US Information Technology
Type II Quantum Well Laser Devices
INVENTORS Luke Mawst, Nelson Tansu
The Wisconsin Alumni Research Foundation (WARF) is seeking commercial partners interested in developing a low-cost, gallium arsenide-based laser device with high performance in the 1.55-micron region.
OVERVIEW
Fiber optic transmission of data across large distances involves the use of laser transmitters that generally operate at three primary wavelengths: 850 nanometers, 1.3 microns and 1.55 microns. Minimal attenuation in the optical fiber at 1.55 microns, together with wavelength division multiplexing (WDM) components and eribium-doped fiber amplifiers (EDFD), has led to the widespread use of 1.55-micron wavelength transmitters in long-haul fiber optic communications systems. Specifically, most of these systems currently use expensive, highly temperature-sensitive, 1.55-micron distributed feedback (DFB) edge-emitting lasers.
THE INVENTION
UW-Madison researchers have developed a low-cost, gallium arsenide-based laser device that exhibits high performance operation in the 1.55-micron region, up to elevated temperatures. The laser’s active region is deposited on a substrate of GaAs and includes electron quantum well layers of GaAsN or InGaAsN, and a hole layer quantum well of GaAsSb with a type II alignment. The composition of these quantum well layers can be selected to provide light emission at wavelengths ranging from 1.3 to 3.0 microns.
APPLICATIONS
  • Edge-emitting lasers
  • Vertical-cavity surface-emitting lasers (VCSELs)
  • Amplifiers
  • Light emitting diodes
KEY BENEFITS
  • Achieves high-performance laser operation in the 1.55-micron region (and longer) on conventional GaAs substrates
  • Provides less expensive alternative to conventional 1.55-micron DFB edge-emitting laser transmitters
  • Much simpler to fabricate than VCSELs involving wafer-bonding, distributed Bragg reflectors (DBRs)
  • Offer high-gain and low-sensitivity to temperature
ADDITIONAL INFORMATION
For More Information About the Inventors
Intellectual Property Status
Tech Fields
Information Technology - Telecommunications
Analytical Instrumentation - Lasers
CONTACT INFORMATION
For current licensing status, please contact our team at licensing@warf.org or phone 608.262.4924. (Clicking this link will open a contact form in a popup window. If you have problems viewing the form, try disabling your popup blocker software.)
WARF Medal of Technology Since its founding in 1925 as the patenting and licensing organization for the University of Wisconsin-Madison, WARF has been working with business and industry to transform university research into products that benefit society. WARF intellectual property managers and licensing staff members are leaders in the field of university-based technology transfer. They are familiar with the intricacies of patenting, have worked with researchers in relevant disciplines, understand industries and markets, and have negotiated innovative licensing strategies to meet the individual needs of business clients.


Contact Us | WARF Extranet | Privacy Policy | IMS Powered