| WARF: P97104US |  |
| High Peak Current Density Resonant Tunneling Diode |
| INVENTORS | • | Dan Botez, Luke Mawst, Ali Mirabedini |
OVERVIEW
A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to the edge of the conduction band in GaAs, with a preferred quantum well layer formed of InGaAs. The resonant tunneling diode structure is grown by a metal organic chemical vapor deposition process on the surface of the nominally exact GaAs substrate. Layers of doped GaAs may be formed on either side of the multilayer resonant tunneling diode structure, and spacer layers of GaAs may also be provided on either side of the barrier layers to reduce the intrinsic capacitance of the structure.
ADDITIONAL INFORMATION
Intellectual Property Status
Tech Fields
Semiconductors & Integrated Circuits - Design & fabrication
Semiconductors & Integrated Circuits - Components & materials
CONTACT INFORMATION
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