| WARF: P98157US |  |
| Narrow Spectral Width High Power Distributed Feedback Semiconductor Lasers |
| INVENTORS | • | Dan Botez, Thomas Earles, Luke Mawst |
OVERVIEW
High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower confinement layers and upper and lower cladding layers. A distributed feedback grating is formed in an aluminum free section of the upper confinement layer to act upon the light generated in the active region to produce lasing action and emission of light from an edge face of the semiconductor laser. Such devices are well suited to being formed to provide a wide stripe, e.g., in the range of 50 to 100 µm or more, and high power, in the 1 watt range, at wavelengths including visible wavelengths.
ADDITIONAL INFORMATION
Intellectual Property Status
Tech Fields
Analytical Instrumentation - Lasers
CONTACT INFORMATION
For current licensing status, please contact our team at
licensing@warf.org
or phone 608.262.4924. (Clicking this link will open a contact form in a popup window. If you have problems viewing the form, try disabling your popup blocker software.)
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