Technologies
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WARF: P99023US

Aluminum-Free Semiconductor Laser for High Power Output


INVENTORS -

Luke Mawst, Dan Botez, Abdulrahman Al-Muhanna, Jerome Wade

The Wisconsin Alumni Research Foundation (WARF) is seeking commercial partners interested in developing a high performance semiconductor laser with increased long-term reliability.
OVERVIEWHigh output power diode lasers with wavelengths in the range of 730-780 nm are used in applications such as laser printing, optical recording and photodynamic therapy for cancer treatments. To obtain light emissions around 780 nm, typical laser structures must have a high aluminum content, which creates problems with long-term and high power operation reliability. Even small aluminum concentrations lead to significant reductions in internal power densities. Although other methods have been developed to provide high output power lasers, issues with reliability continue to be a challenge. A commercially available high power laser with long-term reliability is needed.
THE INVENTIONUW–Madison researchers have developed a semiconductor laser that utilizes an aluminum-free active region layer to emit light in the wavelength range of about 700-800 nm. By utilizing an aluminum-free active layer in conjunction with the performance enhancement of high band-gap confinement and cladding layers, many improvements over conventional high power lasers are seen.

The semiconductor laser comprises an epitaxial structure that is grown on a GaAs or AlGaAs substrate and includes an aluminum-free active region layer and cladding layers adjacent to the confinement layers. The active region layer comprises at least one compressively strained InGaAsP quantum well surrounded by transitional layers. High band-gap InGaAsP cladding and confinement layers may be utilized to suppress carrier leakage.
APPLICATIONS
  • Semiconductor diode lasers
KEY BENEFITS
  • Increased internal power densities and continuous wave output power
  • Operates at high power with high reliability for longer lifetimes than typical laser structures
  • Reduction in carrier leakage from the quantum well
  • Low temperature sensitivity
ADDITIONAL INFORMATION
For More Information About the Inventors
Contact Information
For current licensing status, please contact Jeanine Burmania at jeanine@warf.org or 608-960-9846.
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