WARF: P02318US

Narrow Lateral Waveguide Semiconductor Laser


Luke Mawst, Nelson Tansu, Michael Nesnidal, Steven Meassick, Eric Stiers, Darren Hansen, Troy Goodnough

The Wisconsin Alumni Research Foundation (WARF) is seeking commercial partners interested in developing a semiconductor laser that achieves both low optical power density and single mode operation.
OVERVIEWHigh optical power density at the output facet of a semiconductor laser can adversely affect both the laser’s maximum optical power and its long-term reliability. Laser devices whose optical power mode is distributed over a large area exhibit lower optical power densities than those whose mode is confined to a narrow region. Although this seems to suggest that lasers should possess the widest optical mode possible, single mode operation must be maintained if the laser is to be coupled to a single mode fiber.
THE INVENTIONUW-Madison researchers have now shown that a narrow lateral waveguide can be used in conjunction with a suitable transverse structure to achieve low optical power density and single mode operation in an edge-emitting semiconductor laser. Operation of the narrow lateral waveguide does not depend on a particular transfer structure, and can be combined with a transverse narrow waveguide, a broad waveguide or other structures that feature a large transverse spot size.
  • Semiconductor lasers with low optical power density and single mode operation
  • Achieves both low optical power density and single mode operation
  • Laser is easily grown and processed by standard semiconductor techniques.
For More Information About the Inventors
Contact Information
For current licensing status, please contact Jeanine Burmania at or 608-960-9846.
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