Technologies

Semiconductors & Integrated Circuits

Semiconductors & Integrated Circuits Portfolios

Most Recent Inventions

Real-Time Monitoring of Sputtered Thin Films

UW–Madison researchers have developed methods that combine off-axis sputter deposition with in situ RHEED analysis. Using a new multi-gun approach, films are grown and monitored in a single vacuum chamber that houses components of both systems. In this setup the sputtering magnets are used to align the RHEED electron beam. The problem of beam deflection is addressed by applying antisymmetric magnet configurations to the assembly, resulting in a highly predictable bending of the beam.
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Buffer Layer for Growing High Quality Semiconductors

A UW–Madison researcher has developed a method for forming a layer of mixed metal oxide epitaxial film (e.g., ScAlMgO4) on a sapphire semiconductor substrate. This layer provides a better lattice match than the uncoated sapphire substrate.

The mixed metal oxide layer is formed on the substrate via atomic layer deposition (ALD) and then annealed at a high temperature long enough to turn it into epitaxial film. The buffered substrate may then be used to grow a semiconductor.
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Most Recent Patents

Single-Crystal Halide Perovskite Nanowires with Superior Performance

Metal halide perovskite-based material is emerging as a “superstar” semiconductor material for cost-effective photovoltaic applications. UW–Madison researchers have developed a practical solution growth method for producing single-crystal perovskite nanowires with superior material quality and lasing performance.

Specifically the new method is based on a facile process of low-temperature dissolution of a metal precursor film in a cation precursor solution, followed by recrystallization to form single-crystal perovskite nanostructures such as nanowires, nanorods and nanoplates. Diverse families of metal halide perovskite materials with different cations, anions and dimensionality with different properties can be made to enable high-performance device applications.
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Bottom-Up Patterning of Smooth Graphene Microstructures and Nanostructures

UW–Madison researchers have developed methods for growing patterned, single-crystalline graphene microstructures and nanostructures. Desired features and dimensions are shaped using a growth barrier ‘mask.’

First, a mask of suitable material (such as metal or metal oxide) is deposited in a desired pattern onto a substrate via any lithographic method. Graphene then is grown around the boundaries of the mask by chemical vapor deposition. The method can be used to produce a single layer or multilayer graphite.
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Zinc Oxide Thin Films Have Higher Electron Mobility

UW–Madison researchers have developed a room-temperature, solution-based surface treatment that improves the properties of zinc oxide film. The treatment uses molecules that bind to the film’s surface to increase electron mobility and conductivity.

In the process, a nanometer-thick film of polycrystalline zinc oxide or an alloy is disposed over a supporting substrate and a layer of organic carboxylic acid-containing molecules. The molecules can be derivatives of saturated fatty acids or photosensitizing dye. They bind to the surface of the film via their linkage groups.

The process is compatible with techniques for manufacturing large area electronics on flexible substrates.
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