Analytical Instrumentation, Methods & Materials
Type II Quantum Well Laser Devices
Inventors: Luke Mawst, Nelson Tansu
The Wisconsin Alumni Research Foundation (WARF) is seeking commercial partners interested in developing a low-cost, gallium arsenide-based laser device with high performance in the 1.55-micron region.
Fiber optic transmission of data across large distances involves the use of laser transmitters that generally operate at three primary wavelengths: 850 nanometers, 1.3 microns and 1.55 microns. Minimal attenuation in the optical fiber at 1.55 microns, together with wavelength division multiplexing (WDM) components and eribium-doped fiber amplifiers (EDFD), has led to the widespread use of 1.55-micron wavelength transmitters in long-haul fiber optic communications systems. Specifically, most of these systems currently use expensive, highly temperature-sensitive, 1.55-micron distributed feedback (DFB) edge-emitting lasers.
UW-Madison researchers have developed a low-cost, gallium arsenide-based laser device that exhibits high performance operation in the 1.55-micron region, up to elevated temperatures. The laser’s active region is deposited on a substrate of GaAs and includes electron quantum well layers of GaAsN or InGaAsN, and a hole layer quantum well of GaAsSb with a type II alignment. The composition of these quantum well layers can be selected to provide light emission at wavelengths ranging from 1.3 to 3.0 microns.
- Edge-emitting lasers
- Vertical-cavity surface-emitting lasers (VCSELs)
- Light emitting diodes
- Achieves high-performance laser operation in the 1.55-micron region (and longer) on conventional GaAs substrates
- Provides less expensive alternative to conventional 1.55-micron DFB edge-emitting laser transmitters
- Much simpler to fabricate than VCSELs involving wafer-bonding, distributed Bragg reflectors (DBRs)
- Offer high-gain and low-sensitivity to temperature
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