Wisconsin Alumni Research Foundation

Analytical Instrumentation, Methods & Materials
Analytical Instrumentation Methods Materials
Type II Quantum Well Laser Devices
WARF: P02243US

Inventors: Luke Mawst, Nelson Tansu

The Wisconsin Alumni Research Foundation (WARF) is seeking commercial partners interested in developing a low-cost, gallium arsenide-based laser device with high performance in the 1.55-micron region.
Overview
Fiber optic transmission of data across large distances involves the use of laser transmitters that generally operate at three primary wavelengths: 850 nanometers, 1.3 microns and 1.55 microns. Minimal attenuation in the optical fiber at 1.55 microns, together with wavelength division multiplexing (WDM) components and eribium-doped fiber amplifiers (EDFD), has led to the widespread use of 1.55-micron wavelength transmitters in long-haul fiber optic communications systems. Specifically, most of these systems currently use expensive, highly temperature-sensitive, 1.55-micron distributed feedback (DFB) edge-emitting lasers.
The Invention
UW-Madison researchers have developed a low-cost, gallium arsenide-based laser device that exhibits high performance operation in the 1.55-micron region, up to elevated temperatures. The laser’s active region is deposited on a substrate of GaAs and includes electron quantum well layers of GaAsN or InGaAsN, and a hole layer quantum well of GaAsSb with a type II alignment. The composition of these quantum well layers can be selected to provide light emission at wavelengths ranging from 1.3 to 3.0 microns.
Applications
  • Edge-emitting lasers
  • Vertical-cavity surface-emitting lasers (VCSELs)
  • Amplifiers
  • Light emitting diodes
Key Benefits
  • Achieves high-performance laser operation in the 1.55-micron region (and longer) on conventional GaAs substrates
  • Provides less expensive alternative to conventional 1.55-micron DFB edge-emitting laser transmitters
  • Much simpler to fabricate than VCSELs involving wafer-bonding, distributed Bragg reflectors (DBRs)
  • Offer high-gain and low-sensitivity to temperature
Additional Information
For More Information About the Inventors
For current licensing status, please contact Jeanine Burmania at [javascript protected email address] or 608-960-9846

WARF