Wisconsin Alumni Research Foundation

Semiconductors & Integrated Circuits
Semiconductors Integrated Circuits
High-Quality, Single-Crystalline Silicon-Germanium Films
WARF: P170149US01

Inventors: Max Lagally, Thomas Kuech, Yingxin Guan, Shelley Scott, Abhishek Bhat, Xiaorui Cui

The Invention
High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide Si(1-x)Gex films without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.
Additional Information
For More Information About the Inventors
For current licensing status, please contact Jeanine Burmania at [javascript protected email address] or 608-960-9846