Wisconsin Alumni Research Foundation

Technology

Strain-Engineered Ferroelectric Thin Films

Significant efforts are currently underway to create ferroelectric memory (FeRAM) devices from the materials Pb(Zr,Ti)O3 and SrBi2Ta2O9. The main disadvantages of these materials are the volatility of...
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Chang-Beom Eom, Kyoung-Jin Choi, Darrell Schlom, Long-Qing Chen | P05036US

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