UW-Madison researchers have designed optoelectronic transducers that convert a femtosecond (fs)-timescale laser pulse into an a.c. electrical current pulse with an extremely high frequency and a high ...
Learn More

UW-Madison researchers have developed a new synthesis method, hybrid PLD (Pulsed Laser Deposition), that synergistically combines the advantages of thermal evaporation and conventional PLD to overcome...
Learn More

Oxide thin films have widespread applications in electronic, magnetic, optical materials and devices. Synthesis of oxide thin films via epitaxial growth techniques such as sputtering, molecular beam e...
Learn More

Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high q...
Learn More

The unique properties of vanadium dioxide (VO2) lend it to a variety of applications in materials physics and solid-state electronics. Namely it exhibits a sharp metal-insulator transition (MIT) above...
Learn More

Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bil...
Learn More

Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling ...
Learn More

The discovery of two-dimensionally confined charge carriers has opened an exciting field of new research and various device applications. In particular, two-dimensional electron gas (2DEG) is used in ...
Learn More

The unique properties of vanadium dioxide (VO2) mean it could one day outperform silicon and enable next-generation, ultralow-power devices. A key advantage of this material is that above 341 kelvin �...
Learn More

Significant efforts are currently underway to create ferroelectric memory (FeRAM) devices from the materials Pb(Zr,Ti)O3 and SrBi2Ta2O9. The main disadvantages of these materials are the volatility of...
Learn More

Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a ...
Learn More

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxi...
Learn More

Magnetoelectric devices based on piezoelectric/magnetostrictive bilayers are provided. Also provided are methods of using the devices to modulate or to sense the magnetization of the magnetostrictive ...
Learn More

The semiconductor industry constantly is seeking new methods to improve memory speed and efficiency that are compatible with large-scale fabrication processes and environmentally-friendly. Currently,...
Learn More