| Meet the University of Wisconsin-Madison’s Shubhra Pasayat Professor of Electrical and Computer Engineering |
 |
Research area The wide bandgap group III-nitrides and ultra-wide bandgap group III-oxides are the future of electronics and optoelectronics devices that will serve as the backbone of clean, green and cool solutions. We use novel materials, device designs and unconventional methods to help bring these emerging materials to the market at an accelerated pace.
What excites you about your work?
“The positive impact that our research brings to everyday lives motivates me. Two examples of where we use Gallium nitride in our daily lives are highly efficient LED household lights and 5G base stations that enable fast data rates and fast chargers. The fact that every project we work on brings some positive change in the electronics that we use is quite exciting! We are currently working on improving efficiencies of AR/VR displays, efficient power switches for power conversion, RF transistors that enable high speed communication, and electronics for extreme environments.”
What do you hope to achieve?
“The ultimate goal is to achieve a fully connected digital world, wherein everyone has access to fast communication, energy loss is negligible, and the inventions that we come up with help fight climate change.”
Shubhra’s work with wide- and ultra-wide bandgap semiconductors is key to powering the next generation of high-speed technologies across the electronics industry, and WARF is excited to help bring these breakthroughs to the market.
– Jeanine Burmania, WARF, Senior Director, IP and Licensing
Want to learn more?
Jeanine Burmania, [email protected], 608.960.9846