UW-Madison researchers have developed pseudo-substrates of III-nitride materials and growth methods using an in-situ pororsification technique which is robust and reliable. Electronic or optoelectroni...
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The semiconductor industry constantly is seeking new methods to improve memory speed and efficiency that are compatible with large-scale fabrication processes and environmentally-friendly.Currently, F...
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The demand for smaller wireless communication devices that use less power is growing. In particular, radio frequency identification (RFID) systems require small, low-power transmitters to label or “...
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Complementary metal-oxide semiconductor (CMOS) technology is commonly used in integrated circuits for microelectronics. Current is produced in semiconductor devices by using mobile charge carriers, ei...
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Computer chips, composed of silicon (Si) semiconductors, store and transmit information as electrons.  The negative charge on electrons, however, hinders the speed with which information can be trans...
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UW-Madison researchers have leveraged semiconductor grafting to synthesize and characterize a lattice-mismatched single-crystalline GaAs/GeSn MQW/Ge n-i-p heterojunction. Scanning transmission electro...
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UW Madison researchers developed a method to create a large scale uniform transparent conducting oxide (TCO) films composed of transparent, electrically conducting, perovskite oxides (TCPOs).  The T...
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UW-Madison researchers created a dielectric antenna (realized using crystalline Si), to efficiently extract broadband single-photon fluorescence from shallow quantum centers in solid-state systems int...
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UW-Madison researchers have created structures and methods for AlGaN channel high electron mobility transistors (HEMTs). Typically, extreme bandgap AlGaN channel HEMTs show very high ohmic contact res...
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UW-Madison researchers have created a group III-N based pseudo-substrate using vertical and lateral etch approaches. First they create a porous, compliant group III-nitride layer over which a relaxed ...
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UW-Madison researchers have designed a bidirectional switch based on an AlGaN/GaN structure with BaTiO3 to achieve the ideal target of ~1-1.1x resistance. The design is scalable from 100 V - 10 kV. T...
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UW-Madison researchers have developed an electron shuttling scheme for silicon quantum dot qubits that allows for two-dimensional transport of the qubit over large distances. This advancement allows t...
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UW-Madison researchers have created methods and structures for high temperature SRAM memory using compound semiconductors (like GaN). These high temperature transistors are used to create new forms of...
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There is growing interest in gallium nitride (GaN) as a material for high-frequency and high-power applications, such as high electron mobility transistors (HEMTs) and other field effect transistors (...
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UW-Madison researchers have developed improved Group III-nitride based high electron mobility transistors (HEMTs). The HEMTs combine a high-aluminum-content barrier layer with a recessed gate that pro...
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Current approaches to quantum error correction rely on large-scale networks of interacting qubits to uniquely identify errors in the array. Robust error correction has two requirements: the error rate...
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Semiconducting graphene nanoribbons are promising candidates for succeeding and/or complementing silicon (Si) in logic microprocessors and Group III-V compounds in radio frequency devices and for inte...
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Group III-nitride semiconductors are characterized by the ability to cover a wide emission wavelength range from the deep ultraviolet (UV) to the near infrared (NIR) (i.e., from 6.2 eV to 0.7 eV). InG...
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Compound III-V semiconductors are foundational materials employed for state-of- the-art optoelectronic devices. Planar ultra-thin heterostructure materials, called quantum wells (QWs), are currently t...
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Optical metasurfaces enable unprecedented control over electromagnetic wave manipulation. By leveraging powerful resonance mechanisms supported by subwavelength structures arranged in two-dimensional ...
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Attempts have been made to develop SAM-on-sapphire substrates that include a thin film of SAM on an underlying bulk sapphire support for InGaN growth. However, the SAM films grown by the published met...
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UW-Madison researchers have developed systems and methods for the optical control of qubits and other quantum particles with a combination of spatial light modulators (SLM) and fast deflectors for qua...
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Zinc oxide graphene composite materials have significant interest commercially as they have been demonstrated effective for use in sensors and capacitors. They can act as transparent conductive thin-f...
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Typically, bidirectional switching elements are fabricated using two FET devices, for example, arranged in series with opposite polarities, each device shunted by a diode to steer current to the prope...
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III-nitride materials, such as AlN, GaN, InN, and their solid solutions, possess properties that are simply not accessible in any other semiconductors. However, there are unique processing challenges ...
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