Group III-nitride semiconductors are characterized by the ability to cover a wide emission wavelength range from the deep ultraviolet (UV) to the near infrared (NIR) (i.e., from 6.2 eV to 0.7 eV). InG...
Learn More

Attempts have been made to develop SAM-on-sapphire substrates that include a thin film of SAM on an underlying bulk sapphire support for InGaN growth. However, the SAM films grown by the published met...
Learn More

Zinc oxide graphene composite materials have significant interest commercially as they have been demonstrated effective for use in sensors and capacitors. They can act as transparent conductive thin-f...
Learn More

III-nitride materials, such as AlN, GaN, InN, and their solid solutions, possess properties that are simply not accessible in any other semiconductors. However, there are unique processing challenges ...
Learn More

The feasibility of THz technologies, including high-speed communication, has been curtailed by the problem of high path loss. Theoretically, this hurdle could be overcome if THz receivers were suffici...
Learn More

UW-Madison researchers have developed a group III-nitride-based light emitting devices for efficient LED and laser applications. These devices have one or more quantum wells in the active region with ...
Learn More

UW-Madison researchers have developed a triblock copolymer strategy for controlling the spacing between CNTs. The triblock copolymers consist of an A-B-A architecture where the B block is the conjugat...
Learn More

UW-Madison and University of Chicago researchers have developed a method for directed self-assembly of block copolymer films that relies on obtaining the correct balance of surface energies for the te...
Learn More

Oxide thin films have widespread applications in electronic, magnetic, optical materials and devices. Synthesis of oxide thin films via epitaxial growth techniques such as sputtering, molecular beam e...
Learn More

UW-Madison researchers have developed a fundamentally new type of mmW emitter, which only shows moderate power drop even at the 300 GHz frequency. The device architecture is a multilayer stack of meta...
Learn More

A method of forming a low dielectric constant (low-k) dielectric is disclosed. The method includes providing a substrate and forming a dielectric including porogens over the substrate. While subjectin...
Learn More

Provided herein are methods of directed self-assembly (DSA) on atomic layer chemical patterns and related compositions. The atomic layer chemical patterns may be formed from two-dimensional materials ...
Learn More

Methods for forming carbon nanotube arrays are provided. Also provided are the arrays formed by the methods and electronic devices that incorporate the array as active layers. The arrays are formed by...
Learn More

High-quality, single-crystalline silicon-germanium (Si(1-x)Gex) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-c...
Learn More

Optoelectronic devices that use very thin single-crystalline inorganic semiconductor films as phonon-absorbing layers in combination with non-lattice optical cavities are provided.
Learn More

Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a ...
Learn More

A method to make free-standing graphene sheets and the free-standing graphene sheets so formed. The method includes the steps of exfoliating partially oxidized graphene from a carbon-containing electr...
Learn More

Conjugated polymers composed of bi-pyridine units linked to 9,9-dialkyl fluorenyl-2,7-diyl units via imine linkages along the polymer backbone are provided. Also provided are semiconducting single-wal...
Learn More

Graphene nanoribbon arrays, methods of growing graphene nanoribbon arrays, and electronic and photonic devices incorporating the graphene nanoribbon arrays are provided. The graphene nanoribbons in th...
Learn More

High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors ...
Learn More

Photodetectors based on hydrogen-doped, single-crystalline germanium, including waveguide integrated photodetectors for photonic chip applications are provided. Hydrogen doping provides the single-cry...
Learn More

Acoustically mediated spintronic THz emitters in which sound waves, rather than direct laser pulses, give rise to a spin current in a magnetic material via magnetoelastic coupling are provided. The TH...
Learn More

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxi...
Learn More

Transparent, electrically conductive vanadium oxide-based perovskite films and methods of making the vanadium oxide-based perovskite films are provided. Transparent conducting vanadate perovskites are...
Learn More

The unique properties of vanadium dioxide (VO2) mean it could one day outperform silicon and enable next-generation, ultralow-power devices. A key advantage of this material is that above 341 kelvin �...
Learn More