Semiconductors & Integrated Circuits
LIGHT-EMITTERS WITH GROUP III-NITRIDE-BASED QUANTUM WELL ACTIVE REGIONS HAVING GAN INTERLAYERS
WARF: P230105US01
Inventors: Chirag Gupta, Guangying Wang, Shubhra Pasayat
The Invention
UW-Madison researchers have developed a group III-nitride-based light emitting devices for efficient LED and laser applications. These devices have one or more quantum wells in the active region with a double well design using an AlInGaN alloy or an InGanN alloy adjacent to GaN interlayer, both of which are disposed between two barrier layers of an AlGaN alloy or low-In-content AlInGaN alloy.
For current licensing status, please contact Jeanine Burmania at [javascript protected email address] or 608-960-9846