Wisconsin Alumni Research Foundation

Information Technology
Information Technology
Magnetic Memory Devices Based On 4d And 5d Transition Metal Perovskites
WARF: P170269US02

Inventors: Chang-Beom Eom, Tianxiang Nan, Trevor Anderson

The Invention
Magnetic switching devices, including magnetic memory devices, are provided. The devices use high-quality crystalline films of 4d or 5d transition metal perovskite having a strong spin-orbit coupling (SOC) to produce spin-orbit torque in adjacent ferromagnetic materials via a strong spin-Hall effect. Spin-orbit torque can be generated by the devices with a high efficiency, even at or near room temperature.
Additional Information
For More Information About the Inventors
For current licensing status, please contact Michael Carey at [javascript protected email address] or 608-960-9867