WARF: P150242US01

Improved Nanotube Film for Field Effect Transistors and More


Michael Arnold, Harold Evensen, Gerald Brady, Padma Gopalan, Yongho Joo

The Wisconsin Alumni Research Foundation (WARF) is seeking commercial partners interested in developing a more precise method to make semiconducting single-walled carbon nanotubes.
OVERVIEWSemiconducting single-walled carbon nanotubes (s-SWCNTs) are key building blocks for nanoscale technologies given their interesting physical and chemical properties. They are especially promising for high speed, low power semiconductor electronics. One application is field effect transistors (FETs).

To make useful devices, s-SWCNTs must be formed into pure and well-organized films. While many techniques have been explored, a new and better approach is needed.
THE INVENTIONUW–Madison researchers have developed a more stable method to make high density s-SWCNT film with good nanotube alignment. The film can be incorporated in state-of-the-art FETs and other devices.

The new method is called continuous floating evaporative self-assembly (continuous FESA). In the process, a steady supply of s-SWCNT ‘ink’ (rather than small droplets) is applied over a partially submerged support layer, where it will form into film. This process avoids the surface tension problems associated with droplets.
  • Field effect transistors, displays, sensors, biosensors and heterojunction devices (e.g., solar cells)
  • Steady and precise
  • Readily scaled up
  • High degree of nanotube alignment
  • Exceptional purity
  • Method selects s-SWCNTs without the need for subsequent sorting.
  • Rapid and cost effective
STAGE OF DEVELOPMENTThis process was used to produce a film of highly pure (99.9 percent) aligned s-SWCNTs.
Contact Information
For current licensing status, please contact Jeanine Burmania at or 608-960-9846.
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