UW-Madison researchers created a dielectric antenna (realized using crystalline Si), to efficiently extract broadband single-photon fluorescence from shallow quantum centers in solid-state systems int...
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UW-Madison researchers have created structures and methods for AlGaN channel high electron mobility transistors (HEMTs). Typically, extreme bandgap AlGaN channel HEMTs show very high ohmic contact res...
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UW-Madison researchers have created a group III-N based pseudo-substrate using vertical and lateral etch approaches. First they create a porous, compliant group III-nitride layer over which a relaxed ...
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UW-Madison researchers have designed a bidirectional switch based on an AlGaN/GaN structure with BaTiO3 to achieve the ideal target of ~1-1.1x resistance. The design is scalable from 100 V - 10 kV. T...
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UW-Madison researchers have developed an electron shuttling scheme for silicon quantum dot qubits that allows for two-dimensional transport of the qubit over large distances. This advancement allows t...
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UW-Madison researchers have created methods and structures for high temperature SRAM memory using compound semiconductors (like GaN). These high temperature transistors are used to create new forms of...
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There is growing interest in gallium nitride (GaN) as a material for high-frequency and high-power applications, such as high electron mobility transistors (HEMTs) and other field effect transistors (...
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UW-Madison researchers have developed improved Group III-nitride based high electron mobility transistors (HEMTs). The HEMTs combine a high-aluminum-content barrier layer with a recessed gate that pro...
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Current approaches to quantum error correction rely on large-scale networks of interacting qubits to uniquely identify errors in the array. Robust error correction has two requirements: the error rate...
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Semiconducting graphene nanoribbons are promising candidates for succeeding and/or complementing silicon (Si) in logic microprocessors and Group III-V compounds in radio frequency devices and for inte...
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Group III-nitride semiconductors are characterized by the ability to cover a wide emission wavelength range from the deep ultraviolet (UV) to the near infrared (NIR) (i.e., from 6.2 eV to 0.7 eV). InG...
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Compound III-V semiconductors are foundational materials employed for state-of- the-art optoelectronic devices. Planar ultra-thin heterostructure materials, called quantum wells (QWs), are currently t...
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Optical metasurfaces enable unprecedented control over electromagnetic wave manipulation. By leveraging powerful resonance mechanisms supported by subwavelength structures arranged in two-dimensional ...
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Attempts have been made to develop SAM-on-sapphire substrates that include a thin film of SAM on an underlying bulk sapphire support for InGaN growth. However, the SAM films grown by the published met...
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UW-Madison researchers have developed systems and methods for the optical control of qubits and other quantum particles with a combination of spatial light modulators (SLM) and fast deflectors for qua...
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Zinc oxide graphene composite materials have significant interest commercially as they have been demonstrated effective for use in sensors and capacitors. They can act as transparent conductive thin-f...
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Typically, bidirectional switching elements are fabricated using two FET devices, for example, arranged in series with opposite polarities, each device shunted by a diode to steer current to the prope...
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III-nitride materials, such as AlN, GaN, InN, and their solid solutions, possess properties that are simply not accessible in any other semiconductors. However, there are unique processing challenges ...
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The feasibility of THz technologies, including high-speed communication, has been curtailed by the problem of high path loss. Theoretically, this hurdle could be overcome if THz receivers were suffici...
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UW-Madison researchers have developed new methods of forming films of aligned elongated nanoparticles. These films may include carbon nanotubes and could find use in electronic devices, such as trans...
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UW-Madison researchers have developed a group III-nitride-based light emitting devices for efficient LED and laser applications. These devices have one or more quantum wells in the active region with ...
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Semiconductor deep-ultraviolet (DUV) light-emitting diodes (LEDs) operating at sub-250 nm wavelengths are of interest due to their applications in areas such as sterilization, biosensing, medical trea...
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UW-Madison researchers have designed optoelectronic transducers that convert a femtosecond (fs)-timescale laser pulse into an a.c. electrical current pulse with an extremely high frequency and a high ...
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UW-Madison researchers have developed a compact thermal laser on a chip capable of steering emitted thermal radiation at a continuous range of angles through the application of a voltage. The device i...
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UW-Madison researchers have developed a triblock copolymer strategy for controlling the spacing between CNTs. The triblock copolymers consist of an A-B-A architecture where the B block is the conjugat...
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