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137 Results for 'Semiconductors & Integrated Circuits'
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Technology
COMPOUND SEMICONDUCTOR BASED RANDOM ACCESS MEMORY
UW-Madison researchers have created methods and structures for high temperature SRAM memory using compound semiconductors (like GaN). These high temperature transistors are used to create new forms of...
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Akhilesh Jaiswal, Chirag Gupta, Zihan Yin | P240184US01
Technology
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING IRON-DOPED GROUP III-NITRIDE FILMS
There is growing interest in gallium nitride (GaN) as a material for high-frequency and high-power applications, such as high electron mobility transistors (HEMTs) and other field effect transistors (...
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Chirag Gupta, Swarnav Mukhopadhyay, Shubhra Pasayat | P230402US01
Technology
HIGH-FREQUENCY GROUP III-NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH HIGH-ALUMINUM CONCENTRATION BARRIERS AND RECESSED GATES
UW-Madison researchers have developed improved Group III-nitride based high electron mobility transistors (HEMTs). The HEMTs combine a high-aluminum-content barrier layer with a recessed gate that pro...
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Chirag Gupta, Swarnav Mukhopadhyay, Shubhra Pasayat, Jiahao Chen | P230152US01
Technology
FABRICATION OF NORMAL CONDUCTING OR LOW-GAP ISLANDS FOR DOWNCONVERSION OF PAIR-BREAKING PHONONS IN SUPERCONDUCTING QUANTUM CIRCUITS
Current approaches to quantum error correction rely on large-scale networks of interacting qubits to uniquely identify errors in the array. Robust error correction has two requirements: the error rate...
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Robert McDermott, Britton Plourde | P220028US01
Technology
TRANSFER OF NANOSTRUCTURES USING CROSSLINKABLE COPOLYMER FILMS
Semiconducting graphene nanoribbons are promising candidates for succeeding and/or complementing silicon (Si) in logic microprocessors and Group III-V compounds in radio frequency devices and for inte...
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Michael Arnold, Robert Jacobberger, Padma Gopalan, Jonathan Dwyer | P210256US01
Technology
NUCLEATION LAYER DESIGN FOR THE GROWTH OF INDIUM-CONTAINING GROUP III-NITRIDE-BASED LONG WAVELENGTH EMITTERS
Group III-nitride semiconductors are characterized by the ability to cover a wide emission wavelength range from the deep ultraviolet (UV) to the near infrared (NIR) (i.e., from 6.2 eV to 0.7 eV). InG...
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Chirag Gupta, Guangying Wang, Shubhra Pasayat, Surjava Sanyal, Shuwen Xie | P230399US01
Technology
METHODS FOR FABRICATING QUANTUM DOT OPTOELECTRONIC DEVICES
Compound III-V semiconductors are foundational materials employed for state-of- the-art optoelectronic devices. Planar ultra-thin heterostructure materials, called quantum wells (QWs), are currently t...
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Luke Mawst, Chirag Gupta, Cheng Liu, Padma Gopalan, Nikhil Pokharel, Shubhra Pasayat | P240160US01
Technology
METHODS FOR FABRICATING OPTICAL METASURFACES
Optical metasurfaces enable unprecedented control over electromagnetic wave manipulation. By leveraging powerful resonance mechanisms supported by subwavelength structures arranged in two-dimensional ...
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Filiz Yesilkoy, Yuber Samir Sanchez Rosas, Wihan Adi | P240127US01
Technology
MAGNESIUM ALUMINATE SCANDIUM OXIDE ON VARIOUS SUBSTRATES FOR NITRIDE FILM OVERGROWTH
Attempts have been made to develop SAM-on-sapphire substrates that include a thin film of SAM on an underlying bulk sapphire support for InGaN growth. However, the SAM films grown by the published met...
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Chirag Gupta, Guangying Wang, Shubhra Pasayat, Shuwen Xie | P240066US01
Technology
MULTI-SCALE ARCHITECTURE FOR OPTICAL ADDRESSING AND CONTROL OF QUBIT ARRAYS
UW-Madison researchers have developed systems and methods for the optical control of qubits and other quantum particles with a combination of spatial light modulators (SLM) and fast deflectors for qua...
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Mark Saffman, Trent Graham | P230077US02
Technology
Method for the Synthesis of a Zinc Oxide Graphene Composite Material
Zinc oxide graphene composite materials have significant interest commercially as they have been demonstrated effective for use in sensors and capacitors. They can act as transparent conductive thin-f...
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Seth King, Daniel Little | T190028US02
Technology
HIGH-EFFICIENCY DRIVE CIRCUIT AND BIDIRECTIONAL FET
Typically, bidirectional switching elements are fabricated using two FET devices, for example, arranged in series with opposite polarities, each device shunted by a diode to steer current to the prope...
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Chirag Gupta, Daniel Ludois, Shubhra Pasayat | P220279US02
Technology
METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSICALLY CARBON-DOPED GROUP III-NITRIDE FILMS
III-nitride materials, such as AlN, GaN, InN, and their solid solutions, possess properties that are simply not accessible in any other semiconductors. However, there are unique processing challenges ...
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Shubhra Pasayat, Chirag Gupta, Swarnav Mukhopadhyay, Cheng Liu | P230049US01
Technology
TERAHERTZ RADIATION DETECTORS BASED ON THIN FILMS OF NON-CENTROSYMMETRIC LAYERED TOPOLOGICAL SEMIMETALS
The feasibility of THz technologies, including high-speed communication, has been curtailed by the problem of high path loss. Theoretically, this hurdle could be overcome if THz receivers were suffici...
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Jun Xiao, Ying Wang, Daniel van der Weide | P230436US01
Technology
PATTERNED SURFACE WATER ASSISTED PACKING DENSITY AND ALIGNMENT ENHANCEMENT OF CARBON NANOTUBE ARRAYS
UW-Madison researchers have developed new methods of forming films of aligned elongated nanoparticles. These films may include carbon nanotubes and could find use in electronic devices, such as trans...
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Michael Arnold, Sean Foradori | P230360US01
Technology
LIGHT-EMITTERS WITH GROUP III-NITRIDE-BASED QUANTUM WELL ACTIVE REGIONS HAVING GAN INTERLAYERS
UW-Madison researchers have developed a group III-nitride-based light emitting devices for efficient LED and laser applications. These devices have one or more quantum wells in the active region with ...
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Chirag Gupta, Guangying Wang, Shubhra Pasayat | P230105US01
Technology
A Novel P-Type Contact Scheme for Nitride-Based Light-Emitting Diodes
Semiconductor deep-ultraviolet (DUV) light-emitting diodes (LEDs) operating at sub-250 nm wavelengths are of interest due to their applications in areas such as sterilization, biosensing, medical trea...
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Zhenqiang Ma, Dong Liu | P170282US02
Technology
A MAGNETIC-FIELD-TUNABLE TERAHERTZ OPTOELECTRONIC TRANSDUCER
UW-Madison researchers have designed optoelectronic transducers that convert a femtosecond (fs)-timescale laser pulse into an a.c. electrical current pulse with an extremely high frequency and a high ...
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Jiamian Hu, Shihao Zhuang, Chang-Beom Eom | P230140US01
Technology
THERMAL LASER WITH DYNAMIC BEAM STEERING
UW-Madison researchers have developed a compact thermal laser on a chip capable of steering emitted thermal radiation at a continuous range of angles through the application of a voltage. The device i...
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Victor Brar, Joel Siegel | P220363US01
Technology
SELF-ASSEMBLING ROD-COIL COPOLYMERS FOR CARBON NANOTUBE SORTING AND THE FABRICATION OF CARBON NANOTUBE FILMS
UW-Madison researchers have developed a triblock copolymer strategy for controlling the spacing between CNTs. The triblock copolymers consist of an A-B-A architecture where the B block is the conjugat...
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Padma Gopalan, Michael Arnold, Stephanie Oliveras Santos, Songying Li | P220349US01
Technology
HYBRID PULSED LASER DEPOSITION OF COMPLEX OXIDE THIN FILMS MADE FROM ELEMENTS HAVING A LARGE VAPOR PRESSURE MISMATCH
UW-Madison researchers have developed a new synthesis method, hybrid PLD (Pulsed Laser Deposition), that synergistically combines the advantages of thermal evaporation and conventional PLD to overcome...
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Chang-Beom Eom, Jungwoo Lee, Jieun Kim | P230036US01
Technology
BLOCK COPOLYMER SELF-ALIGNMENT ON ISOLATED CHEMICAL STRIPES
UW-Madison and University of Chicago researchers have developed a method for directed self-assembly of block copolymer films that relies on obtaining the correct balance of surface energies for the te...
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Michael Arnold, Robert Jacobberger, Paul Nealey, Shisheng Xiong, Zhenqiang Ma, Tzu-Hsuan Chang | P190247US02
Technology
LOW-DEFECT-DENSITY GAMMA PHASE ALUMINUM OXIDE SUBSTRATES FOR HETEROEPITAXIAL SYNTHESIS
Oxide thin films have widespread applications in electronic, magnetic, optical materials and devices. Synthesis of oxide thin films via epitaxial growth techniques such as sputtering, molecular beam e...
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Chang-Beom Eom, Rui Liu, Paul Evans, Donald Savage, Thomas Kuech | P210285US01
Technology
SILICON-GERMANIUM ALLOY-BASED QUANTUM DOTS WITH INCREASED ALLOY DISORDER AND ENHANCED VALLEY SPLITTING
Silicon-Germanium (SiGe) heterostructures are used for many purposes in the modern electronics industry, forming the basis of devices such as SiGe heterojunction bipolar transistors and Si/SiGe modula...
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Mark Friesen, Merritt Losert, Susan Coppersmith | P210410US02
Technology
ALKALI METAL OPTICAL CLOCK
UW researchers have invented a Cesium Lattice Optical Clock (CLOC) for high performance and simple operation in a compact form factor. The novel design uses a “forbidden” optical transition in Cs ...
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Mark Saffman, Shimon Kolkowitz, Arjav Sharma | P220217US01