Wisconsin Alumni Research Foundation

Analytical Instrumentation, Methods & Materials
Analytical Instrumentation Methods Materials
High Performance, High Electron Mobility Transistors With Graphene Hole Extraction Contacts
WARF: P170305US01

Inventors: Zhenqiang Ma, Tzu-Hsuan Chang

The Invention
Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).
Additional Information
For More Information About the Inventors
For current licensing status, please contact Jeanine Burmania at [javascript protected email address] or 608-960-9846