Analytical Instrumentation, Methods & Materials
High Performance, High Electron Mobility Transistors With Graphene Hole Extraction Contacts
Inventors: Zhenqiang Ma, Tzu-Hsuan Chang
Radiation detectors based on high electron mobility transistors (HEMTs) are provided. Methods for detecting ultraviolet radiation using the HEMTs are also provided. The transistors are constructed from an intrinsic high bandgap semiconductor material with a built-in polarization field sandwiched between graphene and a two-dimensional electron gas (2DEG).