Semiconductors & Integrated Circuits
Group Iii-V Nitride-Based Ligth Emitting Devices Having Multilayered P-Type Contacts
WARF: P170282US02
Inventors: Zhenqiang Ma, Dong Liu
The Invention
Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.
Additional Information
For More Information About the Inventors
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