Semiconductors & Integrated Circuits
Group Iii-V Nitride-Based Ligth Emitting Devices Having Multilayered P-Type Contacts
Inventors: Zhenqiang Ma, Dong Liu
Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.