Wisconsin Alumni Research Foundation

Semiconductors & Integrated Circuits
Semiconductors Integrated Circuits
Group Iii-V Nitride-Based Ligth Emitting Devices Having Multilayered P-Type Contacts
WARF: P170282US02

Inventors: Zhenqiang Ma, Dong Liu

The Invention
Light-emitting devices having a multiple quantum well (MQW) pin diode structure are provided. The light-emitting devices include a multilayered p-type contact composed of a heavily p-type doped hole injection layer and a thin p-type group III-nitride layer. The materials of the hole injection layer and the p-type group III-nitride layer are separated by a layer of a material that allows current tunneling through the heterogeneous junction formed between the lattice mismatched materials.
Additional Information
For More Information About the Inventors
For current licensing status, please contact Jeanine Burmania at [javascript protected email address] or 608-960-9846