Wisconsin Alumni Research Foundation

Semiconductors & Integrated Circuits
Semiconductors Integrated Circuits
Continuous System For Fabricating Multilayer Heterostructures Via Hydride Vapor Phase Epitaxy
WARF: P180039US01

Inventors: Thomas Kuech, James Rawlings, Min Yao

The Invention
A Hydride Vapor Phase Epitaxy (HVPE) system is provided which comprises a deposition assembly comprising a plurality of deposition chambers and a plurality of separation chambers mounted together, each separation chamber having two opposing ends, each end mounted to a deposition chamber of the plurality of deposition chambers and in fluid communication with the deposition chamber via a fluid pathway, wherein each deposition chamber of the plurality of deposition chambers defines a deposition zone having a height hd, each separation chamber defines a separation zone having a height hs and a length ls, and each fluid pathway has a height hfp, wherein hfp, hs and ls are selected to provide a predetermined interfacial transition region value between different material layers of a multilayer heterostructure; and a moveable belt configured to continuously convey a substrate mounted thereon through the plurality of deposition chambers and the plurality of separation chambers. The system further comprises a gas delivery assembly configured to deliver reactant gas mixtures to the deposition assembly for deposition on the substrate via HVPE.
Additional Information
For More Information About the Inventors
For current licensing status, please contact Michael Carey at [javascript protected email address] or 608-960-9867