WARF TECHNOLOGIES

Light-emitting devices having a multiple quantum well (MQW) diode structure and methods of making and using the devices are provided. The devices include aluminum nitride/aluminum oxide bilayers on their hole injection layers. The bilayers improve the energy efficiency of the devices, with respect to devices that lack the bilayers or that include only a layer of aluminum oxide on their hole injection layers.

For More Information About the Inventors

• Zhenqiang Ma

Tech Fields

• Semiconductors & Integrated Circuits : Design & fabrication