Semiconductors & Integrated Circuits
Aluminum Nitride-Aluminum Oxide Layers For Enhancing The Efficiency Of Group Iii-Nitride Light-Emitting Devices
Inventors: Zhenqiang Ma, Kwangeun Kim
Light-emitting devices having a multiple quantum well (MQW) diode structure and methods of making and using the devices are provided. The devices include aluminum nitride/aluminum oxide bilayers on their hole injection layers. The bilayers improve the energy efficiency of the devices, with respect to devices that lack the bilayers or that include only a layer of aluminum oxide on their hole injection layers.