Semiconductors & Integrated Circuits
P-N Diodes And P-N-P Heterojunction Bipolar Transistors With Diamond Collectors And Current Tunneling Layers
Inventors: Zhenqiang Ma
P-N diodes that include p-type doped diamond and devices, such as p-n-p heterojunction bipolar transistors, that incorporate the p-n diodes are provided. In the p-n diodes, the diamond at the p-n junction has a positive electron affinity and is passivated by a thin layer of inorganic material that provides a tunneling layer that passivates the bonding interface states, without hindering carrier transport across the interface.