Wisconsin Alumni Research Foundation

Semiconductors & Integrated Circuits
Semiconductors Integrated Circuits
Spin Transistors Based On Voltage Controlled Magnon Transport In Multiferroic Antiferromagnets
WARF: P200170US01

Inventors: Chang-Beom Eom, Tianxiang Nan, Jonathon Schad


The Invention
Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detection contact through a multiferroic antiferromagnetic channel via magnon propagation. The spin current transport is modulated by the application of a gate voltage that increases the number of domain boundaries the multiferroic antiferromagnetic material.
Additional Information
For More Information About the Inventors
For current licensing status, please contact Emily Bauer at [javascript protected email address] or 608-960-9842

WARF