Semiconductors & Integrated Circuits
Spin Transistors Based On Voltage Controlled Magnon Transport In Multiferroic Antiferromagnets
Inventors: Chang-Beom Eom, Tianxiang Nan, Jonathon Schad
Voltage-controlled spin field effect transistors (“spin transistors”) and methods for their use in switching applications are provided. In the spin transistors, spin current is transported from a spin injection contact to a spin detection contact through a multiferroic antiferromagnetic channel via magnon propagation. The spin current transport is modulated by the application of a gate voltage that increases the number of domain boundaries the multiferroic antiferromagnetic material.